Original Assignee International Business Machines Corp Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) Doris Chung-Hsun Lin Huiling Shang Tenko Yamashita Current Assignee (The listed assignees may be inaccurate. ( en Inventor Takashi Ando Huiming Bu Ramachandra Divakaruni Bruce B. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Expired - Fee Related Application number US13/332,991 Other versions US20130161763A1 Google Patents Source-drain extension formation in replacement metal gate transistor deviceÄownload PDF Info Publication number US8592264B2 US8592264B2 US13/332,991 US201113332991A US8592264B2 US 8592264 B2 US8592264 B2 US 8592264B2 US 201113332991 A US201113332991 A US 201113332991A US 8592264 B2 US8592264 B2 US 8592264B2 Authority US United States Prior art keywords implant spacer source angle atom Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google Patents US8592264B2 - Source-drain extension formation in replacement metal gate transistor device US8592264B2 - Source-drain extension formation in replacement metal gate transistor device
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